銷售電阻率厚度測試儀
- 所在區域： 北京
- 價格范圍： 0
- 發布日期： 2014-09-18 02:33:45
- 有 效 期： 長期有效
- 供應數量： 20
- 北京羲和陽光科技發展有限公司
- 聯 系 人： 包經理
- 電 話： 010-60290891
- 移動電話： 18618315708
- 傳 真： 010-60290891
- 地 址： 北京市大興區西紅門路26號明珠商務7A-306
產品簡介
電阻率厚度測試儀
產品型號：進口
The system consists of the measuring head, an electronic rack linked by one standard cable with 25-pin D-connectora PC.
功能特點
To allow three thickness scans during belt transport at different wafer sizes, two measuring
bars, one from topone from bottom, hold 3 sensors each. The outer sensors pairs left
and right are mounted on a linear sledgecan be moved simultaneously equidistant to
the center by means of a manually moved lever.
Beforebehind of each capacitive sensor are light barriers to validate the measurements
of a sensor only if both are covered. This assures safe measurements even with different
wafer formsmisalignments. To ensure safe startfinish of measurement the light
barriers have to be uncovered between two incoming wafers. Therefore the wafers must be
at least 30mm apart.
Optionally a one-scan resistivity measurement can be added within the same case, as well
as a one-point P/N sensor.
The electronic rack is connected to a PC which itself is linked with the host PC by an
Ethernet connection.
A simple TCP/IP based protocol is used to communicate measurement valuesto
arm/disarm measurements.
技術參數
■ Wafer Sizes 125 + 156 mm
■ Square, Pseudo-Square, Round
■ 100mm (1 scan only)
■ Thickness 120 – 360 μm
■ Accuracy +/- 1 μm
■ Sensor Diameter 10 mm
■ Active Area 5.5 mm .
■ Distance from Edge 5.5 mm
■ Resistivity 0.2 – 30 Ohm*cm (thk.=240μm)
■ Sheet Resistance 8 – 1200 Ohm/square
■ Accuracy +/- 5 %
■ Sensor Diameter 18 mm
■ Active Area ca. 12 mm .
■ Distance from Edge 11 mm
■ Measuring Time 1 Sec./ Wafer
■ Belt speed 100 – 200 mm/s
■ Distance between Wafers > 30 mm
■ Power Voltage 100 – 240 VAC
■ Consumption 15 VA
產品型號：進口
The system consists of the measuring head, an electronic rack linked by one standard cable with 25-pin D-connectora PC.
功能特點
To allow three thickness scans during belt transport at different wafer sizes, two measuring
bars, one from topone from bottom, hold 3 sensors each. The outer sensors pairs left
and right are mounted on a linear sledgecan be moved simultaneously equidistant to
the center by means of a manually moved lever.
Beforebehind of each capacitive sensor are light barriers to validate the measurements
of a sensor only if both are covered. This assures safe measurements even with different
wafer formsmisalignments. To ensure safe startfinish of measurement the light
barriers have to be uncovered between two incoming wafers. Therefore the wafers must be
at least 30mm apart.
Optionally a one-scan resistivity measurement can be added within the same case, as well
as a one-point P/N sensor.
The electronic rack is connected to a PC which itself is linked with the host PC by an
Ethernet connection.
A simple TCP/IP based protocol is used to communicate measurement valuesto
arm/disarm measurements.
技術參數
■ Wafer Sizes 125 + 156 mm
■ Square, Pseudo-Square, Round
■ 100mm (1 scan only)
■ Thickness 120 – 360 μm
■ Accuracy +/- 1 μm
■ Sensor Diameter 10 mm
■ Active Area 5.5 mm .
■ Distance from Edge 5.5 mm
■ Resistivity 0.2 – 30 Ohm*cm (thk.=240μm)
■ Sheet Resistance 8 – 1200 Ohm/square
■ Accuracy +/- 5 %
■ Sensor Diameter 18 mm
■ Active Area ca. 12 mm .
■ Distance from Edge 11 mm
■ Measuring Time 1 Sec./ Wafer
■ Belt speed 100 – 200 mm/s
■ Distance between Wafers > 30 mm
■ Power Voltage 100 – 240 VAC
■ Consumption 15 VA
